The SiC ingot growing furnace uses PVT, Lely, TSSG and LPE methods
to grow large size crystals of 4 inch, 6 inch and 8 inch
SiC ingot growth equipment focuses on growing large crystals in 4
", 6 "and 8" sizes and achieves fast growth rates. Using
cutting-edge technologies including PVT, Lely, TSSG and LPE, the
design incorporates a precisely-regulated axial temperature
gradient system, flexible radial temperature gradient adjustment,
and a smooth temperature change curve, which together promote the
flattening of the crystal growth interface, thereby increasing the
available crystal thickness.
By optimizing the thermal field distribution, the equipment
effectively reduces the loss of raw materials, improves the
effective utilization rate of powder, and significantly reduces
material waste. In addition, the device enables precise control of
axial and radial temperature gradients, helping to reduce stress
and dislocation density within the crystal. These benefits
translate directly into higher quality crystal yields, lower
internal stress levels and improved product consistency, making it
an indispensable tool for large-scale, cost-effective SiC crystal
production.
Special crystal types for SiC ingot growing furnaces
The SiC ingot growth furnace is the core equipment of SiC crystal
growth technology, supporting the production needs of different
sizes of 4 inch, 6 inch and 8 inch wafers. The device integrates
several advanced processes, including PVT (physical vapor
transfer), Lely method, TSSG (temperature gradient solution method)
and LPE (liquid phase epitaxy method). The PVT method achieves
crystal growth through high temperature sublimation and
recrystallization, the Lely method is used for the preparation of
high-quality crystal seeds, the TSSG method controls the crystal
growth rate through temperature gradients, and the LPE rule is
suitable for the precise growth of epitaxial layers. The
combination of these technologies significantly improves the growth
efficiency and quality of SiC crystals.
The design of the SiC growth furnace allows it to flexibly grow a
variety of crystal structures, such as 4H, 6H, 2H and 3C, among
which the 4H structure is the first choice for power devices
because of its excellent electrical properties. These crystal
structures have important applications in SiC power devices and
semiconductor materials, especially in power electronics, new
energy vehicles, 5G communications, and high-voltage devices, where
they can significantly improve device performance and energy
efficiency.
In addition, the SiC growth furnace ensures high homogeneity of
crystal growth and low defect rate through precise temperature
control and optimized growth environment. Its production capacity
is not only reflected in the stable growth of high-quality
crystals, but also to meet the needs of large-scale industrial
production, providing reliable technical support for the wide
application of SiC materials.
Advantages of Sic ingot growing furnace
1. Unique thermal field design
The design advantages of ZMSH's PVT resistance method are mainly
reflected in the following two points:
According to the process needs to design a single or multiple
independent temperature controllable heaters to meet the needs of
precise control of large size SiC crystal growth temperature and
raw material heating temperature, the radial temperature gradient
of crystal growth is controllable, which is more conducive to the
crystal growth of large size (especially more than 8 inches)sic.
The electromagnetic waves emitted by different coils in the
induction method (coils 1 and 2 in the figure above) will have
cross-regions, resulting in difficult to accurately control the
crystal growth temperature.
The lifting mechanism is designed, which can find the appropriate
longitudinal temperature gradient according to the characteristics
of different heaters; A rotating mechanism is designed to eliminate
the uneven temperature of the crucible circumference.
- The axial temperature gradient is controllable, the radial
temperature gradient is adjustable, the temperature line is gentle,
the crystal growth interface is approximately flat, and the crystal
thickness is increased.
- Reduce raw material consumption: the internal thermal field is
evenly distributed, which makes the internal temperature
distribution of raw materials more uniform, greatly improve the
utilization rate of powder and reduce waste.
- There is no strong coupling between axial temperature and radial
temperature. The axial temperature gradient and radial temperature
can be controlled with high precision respectively, which is the
key to solve crystal stress and reduce crystal dislocation density.
2. High control precision
The high-precision control of SiC crystal growth furnace is one of
its core technical advantages, which is mainly reflected in the
following aspects: the power supply accuracy reaches 0.0005% to
ensure the stability and consistency of the heating process; The
gas flow control accuracy is ± 0.05L /h to ensure the accurate
supply of reaction gas; The temperature control accuracy is ±0.5 ℃,
which provides a uniform thermal field environment for crystal
growth. The pressure control accuracy of the cavity is ±10 Pa, and
stable growth conditions are maintained. These high-precision
control parameters work together to ensure high-quality growth of
SiC crystals.
The key components of SiC growth furnace include proportional
valve, mechanical pump, gas flow meter, molecular pump and power
supply. The proportional valve is used to precisely regulate the
gas flow and directly affect the concentration and distribution of
the reaction gas. Mechanical and molecular pumps work together to
provide a high vacuum environment and reduce the impact of
impurities on crystal growth; Gas flow meters ensure the accuracy
of gas input and maintain stable growth conditions; The high
precision power supply provides stable energy input to the heating
system to ensure the accuracy of temperature control. The
collaborative work of these components plays a decisive role in the
growth rate, crystal quality and defect control of SiC crystals.
SiC growth furnaces from ZMSH provide a reliable guarantee for the
high-quality production of SiC crystals thanks to their high
precision control and optimized design of key components. This not
only promotes the wide application of SiC power devices in the
fields of power electronics, new energy vehicles and 5G
communication, but also lays a solid foundation for the innovative
development of semiconductor technology in the future. As the
demand for SiC materials continues to grow, ZMSH's SiC growth
furnace technology advances will further drive the industry towards
higher performance and lower cost.
3. automatic operation
- Automatic response:Signal monitoring, signal feedback
- Automatic alarm:Overrun warning, dynamic security
- Active prompt:Expert system, human-computer interaction
- Automatic control:Real-time monitoring and storage of production parameters, remote
access and control of mobile terminals
ZMSH's silicon carbide (SiC) furnaces incorporate cutting-edge
automation technology designed to increase operating efficiency. It
is designed with an automatic monitoring system that can respond to
signal changes in real time and provide feedback, while
automatically triggering alarms if parameters exceed a preset
range. In addition, the system supports remote access, enabling
users to monitor parameters in real time and achieve precise
control. Further, the system has built-in active prompt function,
which is convenient for remote support by experts, but also
optimizes the interaction experience between humans and machines,
ensuring smooth operation.
This series of innovative features significantly reduces the need
for manual intervention, strengthens the management accuracy of the
production process, effectively guarantees the high-quality output
of SiC ingot, and lays a solid foundation for efficiency
improvement in large-scale manufacturing environments.
Silicon carbide single crystal growth furnace display
Sic ingot growing furnace parameters
| 6inch sic furnance | 8inch sic furnance |
| PROJECT | PARAMETER | PROJECT | PARAMETER |
| Heating Method | Graphite Resistance Heating | Heating Method | Graphite Resistance Heating |
| Input Power | Three-phase, five-wire AC 380V ± 10% 50Hz~60Hz | Input Power | Three-phase, five-wire AC 380V ± 10% 50Hz~60Hz |
| Max Heating Temperature | 2300°C | Max Heating Temperature | 2300°C |
| Rated Heating Power | 80kW | Rated Heating Power | 80kW |
| Heater Power Range | 35kW ~ 40kW | Heater Power Range | 35kW ~ 40kW |
| Energy Consumption per Cycle | 3500kW·h ~ 4500kW·h | Energy Consumption per Cycle | 3500kW·h ~ 4500kW·h |
| Crystal Growth Cycle | 5D ~ 7D | Crystal Growth Cycle | 5D ~ 7D |
| Main Machine Size | 2150mm x 1600mm x 2850mm (Length x Width x Height) | Main Machine Size | 2150mm x 1600mm x 2850mm (Length x Width x Height) |
| Main Machine Weight | ≈ 2000kg | Main Machine Weight | ≈ 2000kg |
| Cooling Water Flow | 6m³/h | Cooling Water Flow | 6m³/h |
| Cold Furnace Limit Vacuum | 5 × 10⁻⁴ Pa | Cold Furnace Limit Vacuum | 5 × 10⁻⁴ Pa |
| Furnace Atmosphere | Argon (5N), Nitrogen (5N) | Furnace Atmosphere | Argon (5N), Nitrogen (5N) |
| Raw Material | Silicon Carbide Particles | Raw Material | Silicon Carbide Particles |
| Product Crystal Type | 4H | Product Crystal Type | 4H |
| Product Crystal Thickness | 18mm ~ 30mm | Product Crystal Thickness | ≥ 15mm |
| Effective Diameter of Crystal | ≥ 150mm | Effective Diameter of Crystal | ≥ 200mm |
our services
SiC crystal growth furnace customized solutions
We offer tailor-made SiC crystal growth furnace solutions that
combine advanced technologies such as PVT, Lely, TSSG/LPE to meet
the diverse production needs of our customers. From design to
optimization, we are involved in the whole process to ensure that
the performance of the equipment is accurately matched to the
customer's goals, and to help efficient and high-quality SiC
crystal growth.
Customer training service
We provide our customers with comprehensive training services
covering equipment operation, routine maintenance and
troubleshooting. Through the combination of theory and practice
training methods, ensure that your team can master the use of
equipment skills, improve production efficiency and extend the
service life of equipment.
Professional on-site installation and commissioning
We send a professional team to provide on-site installation and
commissioning services to ensure that the equipment is quickly put
into operation. Through the strict installation process and system
verification, we guarantee the stability and performance of the
equipment to reach the optimal state, providing a reliable
guarantee for your production.
Efficient after-sales service
We provide responsive after-sales support, with a professional team
on standby to solve problems in the operation of the equipment.
Whether it is on-site repair or remote technical support, we are
committed to reducing downtime, ensuring that your production
continues to run efficiently and maximize the value of your
equipment.
FAQ:
