8inch SiC Epitaxial Substrate MOS Grade Prime Grade 4H-N Type Large
Diameter
As a pivotal enabler of third-generation semiconductor advancement,
our 8-inch SiC epitaxial wafers achieve dual breakthroughs in
material performance and manufacturing efficiency. With a 78%
larger usable area (200mm) vs. 6-inch wafers and defect density
<0.2/cm² through localized production, they reduce SiC device
costs by >30%. Adopted by leading Chinese manufacturers, these
wafers now power EVs and smart grids, driving domestic substitution
and global competitiveness.
Product specifications of 8inch SiC epitaxial wafer
Parameter
| Specification
|
Diameter
| 200mm
|
Thickness
| 500 ±25μm
|
Epitaxial Thickness
| 5-20μm (customizable)
|
Thickness Uniformity
| ≤3%
|
Doping Uniformity (n-type)
| ≤5%
|
Surface Defect Density
| ≤0.5/cm²
|
Surface Roughness (Ra)
| ≤0.5 nm (10μm×10μm AFM scan)
|
Breakdown Field
| ≥3 MV/cm
|
Electron Mobility
| ≥1000 cm²/(V·s)
|
Carrier Concentration
| 5×10¹³~1×10¹⁹ cm⁻³ (n-type)
|
Crystal Orientation
| 4H-SiC (off-axis ≤0.5°)
|
Buffer Layer Resistivity
| 1×10¹⁸ Ω·cm (n-type)
|
Automotive Certification
| IATF 16949 compliant
|
HTRB Test (175°C/1000h)
| Parameter drift ≤0.5%
|
Supported Devices
| MOSFET, SBD, JBS, IGBT
|
Key features of 8inch SiC epitaxial wafer
1. Process Innovation
- Achieves 68.66μm/h epitaxial growth rate (25% faster than imported
tools) via domestic MOCVD, with <50μm warpage through low-stress
bonding for automated dicing. This high-throughput process enables
20% faster production cycles compared to conventional methods.
2. Material Breakthroughs
- Graded carrier concentration (5×10¹³~1×10¹⁹cm⁻³) reduces SiC MOSFET
R<sub>DS(on)</sub> to <25mΩ·mm², outperforming
6-inch wafers by 18%. The optimized doping profile also enhances
switching efficiency by 15% at high frequencies (>100kHz).
3. Environmental Robustness
- Moisture-resistant passivation maintains electrical stability
>1000h at 85°C/85% RH, enabling tropical energy storage systems.
This performance is validated by MIL-STD-810G humidity testing
protocols.
Application of 8inch SiC epitaxial wafer
1. Electric Vehicles
- Enables 800V traction inverters with 97% efficiency, 350kW peak
power, and 1000km range.
2. Ultra-Fast Charging
- Integrates 1200V SiC modules in liquid-cooled chargers for
600kW/10-minute 500km recharge.
3. Aerospace Power
- Radiation-hardened modules for satellites (-55°C~200°C, 200W/in³),
supporting deep-space missions.
4. Quantum Computing
- Stable operation at 4K in dilution fridges, extending qubit
coherence >1000μs.
Related product recommendations
1. 2inch 3inch 4inch 6inch SiC Epitaxial Wafers 4H-N Production
Grade
2. 6inch SiC Epitaxial Wafer Diameter 150mm 4H-N Type 4H-P Type For
5G Communication
FAQ of 8inch SiC epitaxial wafer
1. Q: What are the key advantages of 8-inch SiC epitaxial
wafers?
A: 8-inch SiC epitaxial wafers enable higher power density
and lower manufacturing costs compared to 6-inch wafers,
supporting 150% more die per wafer and 30% reduced material
waste.
2. Q: Which industries use 8-inch SiC epitaxial wafers?
A: Critical for EV inverters, solar inverters, and 5G
base stations due to 10× higher thermal conductivity and 3×
wider bandgap than silicon.
Tags: #8inch SiC Epitaxial Wafer, #Silicon Carbide Substrate, #Diameter 200mm, #Thickness 500μm, #4H-N Type, #MOS Grade, #Prime
Grade, #Large Diameter
