4H-N Type SiC Substrate 10×10mm Small Wafer Customizable Shape &
Dimensions
The SiC 10×10 small wafer is a high-performance semiconductor
product developed based on third-generation semiconductor material
silicon carbide (SiC). Manufactured using Physical Vapor Transport
(PVT) or High-Temperature Chemical Vapor Deposition (HTCVD)
processes, it offers two polytype options: 4H-SiC or 6H-SiC. With
dimensional tolerance controlled within ±0.05mm and surface
roughness Ra < 0.5nm, the product is available in both N-type
and P-type doped versions, covering a resistivity range of
0.01-100Ω·cm. Each wafer undergoes rigorous quality inspections,
including X-ray diffraction (XRD) for lattice integrity testing and
optical microscopy for surface defect detection, ensuring
compliance with semiconductor-grade quality standards.
SiC Substrate 10×10mm Technical Specification
Parameter Category
| Specification Details
|
Material Type
| 4H-SiC (N-type doped)
|
Standard Dimensions
| 10×10 mm (±0.05mm tolerance)
|
Thickness Options
| 100-500 μm
|
Surface Characteristics
| Ra < 0.5 nm (polished)
Epitaxial-ready surface
|
Electrical Properties
| Resistivity: 0.01-0.1 Ω·cm
Carrier Concentration: 1×10¹⁸-5×10¹⁹ cm⁻³
|
Crystal Orientation
| (0001) ±0.5° (standard)
|
Thermal Conductivity
| 490 W/m·K (typical)
|
Defect Density
| Micropipe Density: <1 cm⁻²
Dislocation Density: <10⁴ cm⁻²
|
Customization Options
| - Non-standard shapes (round, rectangular, etc.)
- Special doping profiles
- Backside metallization
|
SiC Substrate 10×10mm Key Technical Features
- Exceptional Thermal Management: SiC Substrate 10×10mm thermal conductivity up to 490 W/m·K, three
times higher than silicon, significantly reducing device operating
temperature and improving system reliability.
- Superior Electrical Properties: SiC Substrate 10×10mm breakdown field strength of 2-4 MV/cm, ten
times that of silicon, supporting higher voltage operation;
electron saturation drift velocity reaches 2×10^7 cm/s, making it
ideal for high-frequency applications.
- Extreme Environmental Adaptability: SiC Substrate 10×10mm maintains stable performance at temperatures
up to 600°C, with a low thermal expansion coefficient of
4.0×10^-6/K, ensuring dimensional stability under high-temperature
conditions.
- Outstanding Mechanical Performance: Vickers hardness of 28-32GPa, flexural strength exceeding 400MPa,
and exceptional wear resistance, SiC Substrate 10×10mm offering a
service life 5-10 times longer than conventional materials.
- Customization Services: SiC Substrate 10×10mm tailored solutions available for crystal
orientation (e.g., 0001, 11-20), thickness (100-500μm), and doping
concentration (10^15-10^19 cm^-3) based on customer requirements.
SiC Substrate 10×10mm Core Application Areas
1. New Energy Vehicle Powertrains: SiC substrate 10×10mm is used in automotive-grade SiC MOSFETs and
diodes, improving inverter efficiency by 3-5% and extending EV
driving range.
2. 5G Communication Infrastructure: SiC substrate 10×10mm serves as a substrate for RF power
amplifiers (RF PA), supporting millimeter-wave band (24-39GHz)
applications and reducing base station power consumption by over
20%.
3. Smart Grid Equipment: SiC substrate 10×10mm applied in high-voltage direct current
(HVDC) systems for solid-state transformers and circuit breakers,
enhancing power transmission efficiency.
4. Industrial Automation: SiC substrate 10×10mm enables high-power industrial motor drives
with switching frequencies exceeding 100kHz, reducing device size
by 50%.
5. Aerospace Electronics: SiC substrate 10×10mm meets reliability requirements for satellite
power systems and aircraft engine control systems in extreme
environments.
6. High-End Optoelectronic Devices: SiC substrate 10×10mm ideal substrate material for UV LEDs, laser
diodes, and other optoelectronic components.
Related product recommendations
1. 4H-N SiC substrate Silicon Carbon Substrate Square 5mm*5mm
Customized Thickness 350um Prime Grade/ Dummy Grade
2. 10 Mm X 10 Mm 6H Semi-Insulating Type SiC Substrate Research
Grade SiC Crystal Substrate
SiC Substrate 10×10mm FAQ
1. Q: What are the main applications of 10×10 mm SiC wafers?
A: 10×10 mm SiC wafers are primarily used for prototyping power
electronics (MOSFETs/diodes), RF devices, and optoelectronic
components due to their high thermal conductivity and voltage
tolerance.
2. Q: How does SiC compare to silicon for high-power applications?
A: SiC offers 10x higher breakdown voltage and 3x better thermal
conductivity than silicon, enabling smaller, more efficient
high-temperature/high-frequency devices.
Tags: #10×10mm, #Silicon Carbide Substrate, #Diameter 200mm, #Thickness 500μm, #4H-N Type, #MOS Grade, #Prime
Grade, #Large Diameter, #Small Wafer, #Customizable Shape & Dimensions
