3C-SiC Substrate N type Product Grade For 5G Communications
ZMSH specializes in the R&D and production of third-generation
semiconductor materials, with over a decade of industry expertise.
We provide customized services for semiconductor materials such as
sapphire, silicon wafers, and SOI. In the field of silicon carbide
(SiC), we cover 4H/6H/3C-type substrates, supporting full-size
supply from 2-inch to 12-inch wafers, with flexible customization
to meet client requirements, achieving integrated industrial and
trade services.
Our SiC substrates are engineered for high-frequency power
devices and automotive applications (e.g., EV inverters),
offering thermal stability up to 1,600°C and thermal
conductivity of 49 W/m·K, outperforming silicon-based
alternatives . We adhere to international standards and hold
certifications for aerospace-grade materials, ensuring
compatibility with extreme environments.
3C-SiC Substrate Core Features
1. Multi-size Coverage:
- Standard sizes: 2-inch, 4-inch, 6-inch, 8-inch.
- Customizable dimensions: From 5×5 mm to tailored specifications.
2. Low Defect Density:
- Microvoid density <0.1 cm⁻², resistivity ≤0.0006 Ω·cm, ensuring
high device reliability.
3. Process Compatibility:
- 3C-SiC substrate is suitable for high-temperature oxidation, lithography, and other
complex processes.
- Surface flatness: λ/10 @632.8 nm, ideal for precision device
manufacturing.
3C-SiC Substrate Material Properties
1. Electrical Advantages:
- High Electron Mobility: 3C-SiC achieves 1,100 cm²/V·s,
significantly outperforming 4H-SiC (900 cm²/V·s), reducing
conduction losses.
- Wide Bandgap: 3.2 eV bandgap enables high-voltage tolerance (up
to 10 kV).
2. Thermal Performance:
- High Thermal Conductivity: 49 W/m·K, superior to silicon,
supporting stable operation from -200°C to 1,600°C.
3. Chemical Stability:
- Resistant to acids/alkalis and radiation, suitable for aerospace
and nuclear applications.
3C-SiC Substrate Material Technical Parameter
| Grade | Zero MPD Production Grade (Z Grade) | Standard Production Grade (P Grade) | Dummy Grade (D Grade) |
| Diameter | 145.5 mm–150.0 mm |
| Thickness | 350 μm ±25 μm |
| Wafer Orientation | Off axis: 2.0°-4.0°toward [1120]± 0.5° for 4H/6H-P, On axis: 〈111〉
± 0.5° for 3C-N |
| ** Micropipe Density | 0 cm⁻² |
| ** Resistivity | p-type 4H/6H-P | ≤0.1 Ω·cm | ≤0.3 Ω·cm |
| n-type 3C-N | ≤0.8 mΩ·cm | ≤1 mΩ·cm |
| Primary Flat Orientation | 4H/6H-P | {1010} ±5.0° |
| 3C-N | {110} ±5.0° |
| Primary Flat Length | 32.5 mm ±2.0 mm |
| Secondary Flat Length | 18.0 mm ±2.0 mm |
| Secondary Flat Orientation | Silicon face up, 90° CW. from Prime flat ±5.0° |
| Edge Exclusion | 3 mm | 6 mm |
| LTV/TIV/Bow/Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm |
| * Roughness | Polish Ra≤1 nm |
| CMP Ra≤0.2 nm | Ra≤0.5 nm |
| Edge Cracks By High Intensity Light | None | Cumulative length≤10 mm, single length≤2 mm |
| * Hex Plates By High Intensity Light | Cumulative area≤0.05% | Cumulative area≤0.1% |
| * Polytype Areas By High Intensity Light | None | Cumulative area≤3% |
| Visual Carbon Inclusions | None | Cumulative area≤0.05% |
| # Silicon Surface Scratches By High Intensity Light | None | Cumulative length≤1×wafer diameter |
| Edge Chips High By Intensity Light | None permitted≥0.2mm width and depth | 5 allowed, ≤1 mm each |
| Silicon Surface Contamination By High Intensity | None |
| Packaging | Multi-wafer Cassette or Single Wafer Container |
Notes:
* Defects limits apply to entire wafer surface except for the edge
exclusion area.
* The scratches should be checked on Si face only.
Application Scenarios for 3C-SiC Substrates
1. High-Frequency Power Devices:
- 5G Communication Base Stations: 3C-SiC substrates serves as RF
device substrates, enabling mmWave signal transmission for
high-speed communication.
- Radar Systems: Low-loss characteristics minimize signal
attenuation, enhancing detection accuracy.
2. Electric Vehicles (EVs):
- On-Board Chargers (OBC): 3C-SiC substrates reduces energy loss
by 40%, shortening charging time for 800V platforms.
- DC/DC Converters: 3C-SiC substrates cuts 80–90% energy loss,
improving driving range.
3. Industrial & Energy:
- Solar Inverters: Boosts efficiency by 1–3%, reduces volume by
40–60%, and withstands harsh environments.
- Smart Grids: Reduces equipment size/weight and cooling demands,
lowering infrastructure costs.
4. Aerospace:
- Radiation-Hardened Devices: 3C-SiC substrates replaces
silicon-based components in satellites and rockets, enhancing
radiation resistance and lifespan.
Recommend other models of SiC
