- use Silicon Monocrystals to make, with high purity, 99.999%
- support customized ones with design artwork
- resistivity varies greatly by the doped type
- can be either P-type (with boron) or N-type (with phosphorus or
arsenic)
- widely used in high-tech areas, like ICs, photovoltaics and MEMS
devices
Description of the Si wafer
Silicon wafers are thin, flat disks made from highly purified
single-crystal silicon and are widely used in the semiconductor
industry.
These wafers are the basic substrate for manufacturing integrated
circuits and a variety of electronic devices.
Silicon wafers typically range from 2 inches (50 mm) to 12 inches
(300 mm) in diameter, and their thickness varies depending on size,
typically between 200 µm and 775 µm.
Silicon wafers are manufactured using the Czochralski or Float-Zone
methods and are carefully polished to obtain a mirror surface with
minimal roughness. They can be doped with elements such as boron
(P-type) or phosphorus (N-type) to modify their electrical
properties.
Key properties include high thermal conductivity, low coefficient
of thermal expansion, and excellent mechanical strength.
Wafers can also have epitaxial layers or thin silicon dioxide
layers to enhance electrical properties and insulation.
They are processed and handled in a cleanroom environment to
maintain purity, ensuring high yield and reliability in
semiconductor manufacturing.
More about the Si wafer
| Growth method | Czochralski(CZ), floating zone(FZ) |
| Crystal structure | Cubic |
| Band gap | 1.12 eV |
| Density | 2.4 g/cm3 |
| Melting point | 1420℃ |
| Dopant type | Undoped | Boron-doped | Phos-doped / As-doped |
| ConductiveType | Intrinsic | P-type | N-type |
| Resistivity | >1000 Ωcm | 0.001~100 Ωcm | 0.001~100 Ωcm |
| EPD | <100 /cm2 | <100/cm2 | <100/cm2 |
| Oxygen content | ≤1x1018 /cm3 |
| Carbon content | ≤5x1016 /cm3 |
| Thickness | 150um, 200um, 350um, 500um or others |
| Polishing | Single-side polished or Double-side polished |
| Crystal orientation | <100>, <110>, <111> ±0.5º or other off-angle |
| Surface roughness | Ra≤5Å(5µmx5µm) |
Samples of the Si wafer
*If you have any other requirements, please feel free to contact us
to customize one.
About us and the packaging box
About us
Our enterprise, ZMSH, specialises in the research, production,
processing, and sales of Semiconductor substrates and optical
crystal materials.
We have an experienced engineering team, management expertise,
precision processing equipment, and testing instruments, providing
us with extremely strong capabilities in processing non-standard
products.
We can research, develop, and design various new products according
to customer needs.
The company will adhere to the principle of "customer-centred,
quality-based" and strive to become a top-tier high-tech enterprise
in the field of optoelectronic materials.
About packaging box
Devoting to assisting our customers, we use wafer foam plastic to
package.
Here are some pictures of these.
FAQ
1. Q: What difference between P-type and N-type of Si wafers?
A: P-type silicon wafers have holes as the main charge carriers,
while N-type wafers have electrons, with minimal differences in
other physical properties like resistivity.
2. Q: Si wafer, SiO2 wafer and SiC wafer, what are the main
differences of them?
A: Silicon (Si) wafers are pure silicon substrates used primarily
in semiconductor devices,
SiO₂ wafers have a silicon dioxide layer on the surface, often used
as an insulating layer.
Silicon carbide (SiC) wafers are composed of a compound of silicon
and carbon, offering higher thermal conductivity and durability,
making them suitable for high-power and high-temperature
applications.
