3C SiC wafer, 3C Silicon Carbide Wafer, SiC Substrate, Silicon
Carbide Substrate, Prime Grade, Dummy Grade, 4inch 3C N-type SiC,
4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 3C-N 4H-N, 4H-SEMI,
6H-N, HPSI 4H-P 6H-P type
About 3C-N SiC
- support customized ones with design artwork
- a cubic crystal (3C SiC), made by SiC monocrystal
- High hardness, Mohs hardness reaches 9.2, second only to diamond.
- excellent thermal conductivity, suitable for high-temperature
environments.
- wide bandgap characteristics, suitable for high-frequency,
high-power electronic devices.
Description of 3C-N SiC
The 4-inch 3C-N type silicon carbide (SiC) wafer is characterized
by its cubic crystal structure, differing from the hexagonal
structure typically seen in 4H-SiC wafers.
In 3C-SiC, silicon and carbon atoms are arranged in a cubic
lattice, similar to the diamond structure, giving it unique
properties that stand out in certain applications.
One of the major advantages of 3C-SiC is its higher electron
mobility and saturation velocity.
Compared to 4H-SiC, 3C-SiC allows for faster electron movement and
higher power handling capability, which makes it a promising
material for power electronic devices.
This property, combined with the relative ease of manufacturing and
lower cost, positions 3C-SiC as a more cost-effective solution in
large-scale production.
Moreover, 3C-SiC wafers are particularly suitable for
high-efficiency power electronic devices.
The material’s excellent thermal conductivity and stability enable
it to perform well in harsh conditions involving high temperatures,
pressure, and frequencies.
As a result, 3C-SiC is ideal for use in electric vehicles, solar
inverters, and energy management systems, where high efficiency and
reliability are critical.
Currently, 3C-SiC devices are primarily built on silicon
substrates, though challenges remain due to lattice and thermal
expansion coefficient mismatches, which affect performance.
However, the development of bulk 3C-SiC wafers is a growing trend,
expected to drive significant advancements in the power electronics
industry, particularly for devices in the 600V-1200V voltage range.
More Details of 3C-N SiC
| Propery | N-type 3C-SiC, Single Crystal |
| Lattice Parameters | a=4.349 Å |
| Stacking Sequence | ABC |
| Mohs Hardness | ≈ 9.2 |
| Density | 2.36 g/cm3 |
| Therm. Expansion Coefficient | 3.8×10-6/K |
| Refraction Index @750nm | n=2.615 |
| Dielectrc Constant | c~9.66 |
| Thermal Conductivity | 3-5 W/cm·K@298K |
| Band-Gap | 2.36 eV |
| Break-Down Electrical Field | 2-5×106V/cm |
| Saturation Drift Velocity | 2.7×107m/s |
Other sampls of 3C-N SiC
*Furthermore, we accept customisation if you have spec
requirements.
About us
Our enterprise, ZMSH, specialises in the research, production,
processing, and sales of Semiconductor substrates and optical
crystal materials.
We have an experienced engineering team, and management expertise
in processing equipment, and testing instruments, providing us with
extremely strong capabilities in processing non-standard products.
We can research, develop, and design various new products according
to customer needs.
The company will adhere to the principle of "customer-centred,
quality-based" and strive to become a top-tier high-tech enterprise
in optoelectronic materials.
Products Recommend
1.4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um
500um Prime Grade Dummy Grade SiC Wafer
2.2inch 4H-N Silicon Carbide SiC Substrate Thickness 350um 500um
SiC wafer Prime Grade Dummy Grade
FAQ
1. Q: Does 3C-N SiC need to be replaced frequently?
A: No, 3C-N SiC does not need to be replaced frequently due to its
exceptional durability, thermal stability, and resistance to wear
and tear.
2. Q: Can the colour of 3C-N sic be changed?
A: The color of 3C-SiC can theoretically be altered through surface
treatments or coatings, but this is not common. Altering the
material's color could impact its optical, thermal, or electronic
properties, so it must be done carefully to avoid negative
performance effects.
