Semi-insulating SiC on Si Compound Wafer, SiC wafer, Silicon
Carbide Wafer, Compound Wafer, SiC on Si Compound Substrate,
Silicon Carbide Substrate, Prime Grade, Dummy Grade, Square SiC,
2inch, 4inch, 6inch, 8inch, 12inch 4H-N, 6H-N, 4H-SEMI
The Character of 4H-N SiC
- support customized ones with design artwork
- use SiC Monocrystal to make (Silicon Carbide Single Crystal)
- high performance, high hardness 9.2, wear-resistant
- wide bandgap and high electron mobility
-Widely used in technology sectors such as power electronics, LEDs, sensors, etc.
The Description of 4H-N SiC
SiC substrate refers to a wafer made of silicon carbide (SiC),
which is a wide-bandgap semiconductor material that has excellent
electrical and thermal properties.
4H-N SiC is a silicon carbide material that belongs to the 4H
crystal structure in the silicon carbide polytype.
Its "N" represents that it is an N-type semiconductor material with
electronic conductivity.
The 4H structure is a four-layer stacked hexagonal crystal
arrangement.
With this unique crystal structure, its application in high-power
and high-frequency electronic devices is very prominent.
4H-N SiC has a wide bandgap (about 3.26 eV) and can still operate
stably at high temperatures, making it suitable for electronic
devices in extreme environments.
Its wide bandgap brings good thermal stability and excellent
radiation resistance, especially suitable for occasions such as
aerospace and nuclear energy that require extremely high material
stability.
In addition, 4H-N SiC has higher electron mobility and higher
breakdown electric field strength, so it is widely used in power
semiconductors, radio frequency devices, and high-efficiency energy
and electronic devices such as electric vehicles.
Its excellent physical properties make it a key material for future
high-efficiency electronic systems, which can significantly improve
efficiency and performance.
The Details of 4H-N SiC
| Grade | Production Grade | Dummy Grade |
| Diameter | 150.0 mm +/- 0.2 mm |
| Thickness | 500 um +/- 25 um for 4H-SI350 um +/- 25 um for 4H-N |
| Wafer Orientation | On axis: <0001> +/- 0.5 deg for 4H-SIOff axis: 4.0 deg toward
<11-20> +/-0.5 deg for 4H-N |
| Micropipe Density (MPD) | 5 cm-2 | 30 cm-2 |
| Doping Concentration | N-type: ~ 1E18/cm3SI-type (V-doped): ~ 5E18/cm3 |
| Primary Flat (N-type) | {10-10} +/- 5.0 deg |
| Primary Flat Length (N-type) | 47.5 mm +/- 2.0 mm |
| Notch (Semi-Insulating type) | Notch |
| Edge exclusion | 3 mm |
| TTV /Bow /Warp | 15um /40um /60um |
| Surface Roughness | Polish Ra 1 nm |
| CMP Ra 0.5 nm on the Si face |
More samples of 4H-N SiC
*This is the 2inch one.
About us
Our enterprise, ZMSH, specialises in the research, production,
processing, and sales of Semiconductor substrates and optical
crystal materials.
We have an experienced engineering team, management expertise,
precision processing equipment, and testing instruments, providing
us with extremely strong capabilities in processing non-standard
products.
We can research, develop, and design various new products according
to customer needs.
The company will adhere to the principle of "customer-centred,
quality-based" and strive to become a top-tier high-tech enterprise
in the field of optoelectronic materials.
