2inch N-Gallium Arsenide Substrate, N-GaAs VCSEL Epitaxial Wafer,
Semiconductor epitaxial wafer, 2inch N-GaAs Substrate, GaAs single
crystal wafer 2inch 3inch 4inch N-GaAs substrates, semiconductor
wafer, N-Gallium Arsenide Laser Epitaxial Wafer
Features of N-GaAs Substrate
- use GaAs substrates to manufature
- support customized ones with design artwork
- direct bandgap, emits light efficiently, used in lasers.
- in the wavelength range of 0.7μm to 0.9μm, quantum well
structures
- using techniques such as MOCVD or MBE, etching, metallization,
and packaging to achieve the final form of the device
Description of N-GaAs Substrate
VCSEL (Vertical Cavity Surface Emitting Laser) epitaxial wafers
based on N-GaAs (n-type gallium arsenide) substrates are a key
optoelectronic material widely used in the fields of lasers and
optical communications.
The N-GaAs substrate is composed of gallium (Ga) and arsenic (As),
and uses n-type doping technology to increase the concentration of
free electrons, thereby improving conductivity and electron
mobility.
This material has an energy bandwidth of about 1.42 eV, which is
suitable for laser emission and has excellent optoelectronic
properties.
The structure of VCSEL usually includes multiple quantum wells and
reflector layers, which are grown on the N-GaAs substrate to form
an efficient laser cavity.
The quantum well layer is responsible for exciting and emitting
lasers, while the reflector enhances the output efficiency of the
laser.
The excellent thermal stability and electrical properties of the
N-GaAs substrate ensure the high performance and stability of the
VCSEL, making it perform well in high-speed data transmission.
VCSELs based on N-GaAs substrates are widely used in fields such as
optical fiber communications, laser printers, and sensors.
Its high efficiency and low power consumption make it an important
part of modern communication technology.
With the increasing demand for high-speed data transmission, VCSEL
technology based on N-GaAs substrate is gradually becoming an
important direction for the development of optoelectronics,
promoting the progress and innovation of various applications.
Details of N-GaAs Substrate
| Parameter | VCSEL |
| rate | 25G/50G |
| wavelength | 850nm |
| size | 4inch/6inch |
| Cavity mode Tolerance | Within ±3% |
| Cavity mode Uniformity | ≤1% |
| Doping level Tolerance | Within ±30% |
| Doping level Uniformity | ≤10% |
| PL Wavelength Uniformity | Std.Dev better than 2nm @inner 140mm |
| Thickness Uniformity | Better than ±3% @inner 140mm |
| Mole fraction x Tolerance | Within ±0.03 |
| Mole fraction x Uniformity | ≤0.03 |
More samples of N-GaAs Substrate
*If you have the customized requirements, please feel free to
contact us.
About us
About us
Our enterprise, ZMSH, specialises in the research, production,
processing, and sales of Semiconductor substrates and optical
crystal materials.
We have an experienced engineering team, management expertise,
precision processing equipment, and testing instruments, providing
us with extremely strong capabilities in processing non-standard
products.
We can research, develop, and design various new products according
to customer needs.
The company will adhere to the principle of "customer-centred,
quality-based" and strive to become a top-tier high-tech enterprise
in the field of optoelectronic materials.
