6Inch Sic Silicon Carbide Substrate 4H-P Diameter 150mm Thickness
350μm Zero MPD Production, Standard Production Grade
4H-P silicon carbide (SiC) is an important semiconductor material
commonly used in high-temperature, high-frequency, and high-power
electronic devices. 4H-SiC is a type of its crystal structure that
has a hexagonal lattice structure. The wide bandgap (approx. 3.26
eV) allows it to operate in high temperature and high voltage
environments. High thermal conductivity (about 4.9 W/m ·· K),
superior to silicon, can effectively guide and dissipate heat.
P-type doped silicon carbide has a low resistivity and is suitable
for the construction of PN junctions. With the development of
electric vehicles and renewable energy technologies, the demand for
4H-P type silicon carbide is expected to continue to grow, driving
related research and technological advancements.
Features:
· Type: 4H-SiC crystal has a hexagonal lattice structure and
provides excellent electrical characteristics.
· Wide bandgap: approx. 3.26 eV for high temperature and high
frequency applications.
· P-type doping: P-type conductivity is obtained by doping elements
such as aluminum, increasing the pore conductor concentration.
· Resistivity: Low resistivity, suitable for high power devices.
· High thermal conductivity: approx. 4.9 W/m·K, effective heat
dissipation, suitable for high power density applications.
· High temperature resistance: It can work stably in high
temperature environment.
· High hardness: Very high mechanical strength and toughness for
harsh conditions.
· High breakdown voltage: Able to withstand higher voltages and
reduce device size.
· Low switching loss: Good switching characteristics in
high-frequency operation to improve efficiency.
· Corrosion resistance: Good corrosion resistance to a wide range
of chemicals.
· Wide range of applications: suitable for electric vehicles,
inverters, high-power amplifiers and other fields.
Technical Parameters:
| 6-inch diameter Silicon Carbide (SiC) Substrate Specification |
| Grade | Zero MPD Production
Grade (Z Grade) | Standard Production
Grade (P Grade) | Dummy Grade
(D Grade) |
| Diameter | 145.5 mm~150.0 mm |
| Thickness | 350 μm ± 25 μm |
| Wafer Orientation | Off axis: 2.0°-4.0°toward [1120] ± 0.5° for 4H/6H-P, On axis:〈111〉±
0.5° for 3C-N |
| Micropipe Density | 0 cm-2 |
| Resistivity | p-type 4H/6H-P | ≤0.1 Ω.cm | ≤0.3 Ω.cm |
| Primary Flat Orientation | p-type 4H/6H-P | {1010} ± 5.0° |
| Primary Flat Length | 32.5 mm ± 2.0 mm |
| Secondary Flat Length | 18.0 mm ± 2.0 mm |
| Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ± 5.0° |
| Edge Exclusion | 3 mm | 6 mm |
| LTV/TTV/Bow /Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm |
| Roughness | Polish Ra≤1 nm |
| CMP Ra≤0.2 nm | Ra≤0.5 nm |
| Edge Cracks By High Intensity Light | None | Cumulative length ≤ 10 mm, single length≤2 mm |
| Hex Plates By High Intensity Light | Cumulative area ≤0.05% | Cumulative area ≤0.1% |
| Polytype Areas By High Intensity Light | None | Cumulative area≤3% |
| Visual Carbon Inclusions | Cumulative area ≤0.05% | Cumulative area ≤3% |
| Silicon Surface Scratches By High Intensity Light | None | Cumulative length≤1×wafer diameter |
| Edge Chips High By Intensity Light | None permitted ≥0.2mm width and depth | 5 allowed, ≤1 mm each |
| Silicon Surface Contamination By High Intensity | None |
| Packaging | Multi-wafer Cassette or Single Wafer Container |
Applications:
1. Power electronics
Power converters: For efficient power adapters and inverters for
smaller size and higher energy efficiency.
Electric vehicles: Optimize power conversion efficiency in drive
modules and charging stations for electric vehicles.
2. RF devices
Microwave amplifiers: Used in communication and radar systems to
provide reliable high-frequency performance.
Satellite Communications: High-power amplifier for communication
satellites.
3. High temperature applications
Sensor: A sensor used in extreme temperature environments, capable
of stable operation.
Industrial equipment: equipment and instruments adapted to high
temperature conditions.
4. Optoelectronics
LED technology: Used to improve luminous efficiency in specific
short-wavelength LEDs.
Lasers: Efficient laser applications.
5. Power system
Smart Grid: Improving energy efficiency and stability in
high-voltage direct current (HVDC) transmission and grid
management.
6. Consumer Electronics
Fast charging device: A portable charger for electronic devices
that improves charging efficiency.
7. Renewable energy
Solar inverter: Achieve higher energy conversion efficiency in
photovoltaic systems.
Customization:
Our SiC substrate is available in the 4H-P type and is RoHS
certified. The minimum order quantity is 10pc and the price is by
case. The packaging details are customized plastic boxes. The
delivery time is within 30 days and we accept T/T payment terms.
Our supply ability is 1000pc/month. The SiC substrate size is
6Inch. Place of origin is China.
FAQ:
1. Q: Do you offer custom service for 4H-P type SIC substrate?
A: Yes, our company provides custom service for 4H-P type silicon
carbide substrate. Customers can choose substrates with different
specifications and parameters, such as diameter, thickness, doping
concentration, etc., according to their specific needs to meet the
requirements of specific applications.
2. Q: How to ensure the quality of 4H-P type silicon carbide
substrate?
A: Our company ensures the quality of 4H-P type silicon carbide
substrate through strict process control and quality inspection.
From raw material selection, crystal growth, cutting and polishing
to final inspection, every step follows high standards and strict
requirements to ensure that products meet customer expectations and
industry standards.
Tag: #SIC, #Silicon carbide substrate, #4H crystal type, #P-type
conductivity, #Semiconductor materials, #Sic 4H-P type.
