Sic 3C-N Type Size Machining Conductive Type for Radar Systems Zero
MPD Production Grade
3C-SiC (Cubic Silicon Carbide) is a wide bandgap semiconductor
material with good electrical and thermal properties, especially
suitable for high-frequency, high-power and electronic device
applications. N-type doping is usually achieved by introducing
elements such as nitrogen (N) and phosphorus (P), which makes the
material electronegative and suitable for a variety of electronic
device designs. The bandgap is approximately 3.0 eV, making it
suitable for high temperature and high voltage applications. N-type
doping still maintains high electron mobility, which enhances the
performance of the device. Excellent thermal conductivity helps to
improve the heat dissipation ability of power devices. It has good
mechanical strength and is suitable for use in harsh environments.
It has good resistance to a wide range of chemicals and is suitable
for industrial applications. In power electronics, it is used in
high-efficiency power converters and drives, suitable for electric
vehicles and renewable energy systems.
Features
Wide bandgap: Bandgap of approximately 3.0 eV for high temperature
and high voltage applications.
High Electron Mobility: N-type doping provides good electron
mobility and enhances the overall performance of the device.
Excellent thermal conductivity: It has excellent thermal
conductivity and effectively improves heat dissipation performance,
suitable for high-power applications.
Good mechanical strength: It has high toughness and compressive
strength, and is suitable for use in harsh environments.
Chemical resistance: Good resistance to a wide range of chemicals,
enhancing the stability of the material.
Adjustable electrical characteristics: By adjusting the doping
concentration, different electrical properties can be achieved to
meet the needs of a variety of applications.
Technical Parameter
Propery | N-type 3C-SiC, Single Crystal |
| Lattice Parameters | a=4.349 Å |
| Stacking Sequence | ABC |
| Mohs Hardness | ≈9.2 |
| Density | 2.36 g/cm3 |
| Therm. Expansion Coefficient | 3.8×10-6/K |
| Refraction Index @750nm | n=2.615 |
| Dielectrc Constant | c~9.66 |
Thermal Conductivity | 3-5 W/cm·K@298K |
| Band-Gap | 2.36 eV |
| Break-Down Electrical Field | 2-5×106V/cm |
Saturation Drift Velocity | 2.7×107m/s |
※ Silicon carbide material properties is only for reference.
Applications
1. Power electronics: for high-efficiency power converters,
inverters and drives, widely used in electric vehicles and
renewable energy systems. 2. RF & Microwave Equipment: RF amplifiers, microwave equipment,
especially suitable for communication and radar systems. 3. Optoelectronics: It can be used as a building block for LEDs and
light detectors, especially in blue and ultraviolet applications. 4. Sensors: Applied to a wide range of sensors in high-temperature
and high-power environments, providing reliable performance. 5. Wireless Charging and Battery Management: Used in wireless
charging systems and battery management devices to improve
efficiency and performance. 6. Industrial electrical equipment: Used in industrial automation
and control systems to improve energy efficiency and system
stability.
Customization
Our SiC substrate is available in the 3C-N type and is RoHS
certified. The minimum order quantity is 10pc and the price is by
case. The packaging details are customized plastic boxes. The
delivery time is within 30 days and we accept T/T payment terms.
Our supply ability is 1000pc/month. The SiC substrate size is 6
inch. Place of origin is China.
FAQ
