A Silicon Carbide (SiC) Horizontal Furnace Tube is a
high-performance ceramic tube manufactured using reaction
sintering or chemical vapor deposition (CVD) processes,
specifically designed for high-temperature and corrosive
industrial environments. It serves as a process tube, operating in atmospheres
containing oxygen, nitrogen, and trace hydrogen chloride, with
a typical working temperature of 1250°C and the capability to
withstand even higher temperatures. Its core value lies in leveraging the intrinsic properties of
silicon carbide—extremely high hardness, high stiffness, low
coefficient of thermal expansion, high thermal conductivity, and
exceptional chemical stability—to ensure outstanding
dimensional stability, structural integrity, and long service
life under extreme conditions of heat, corrosion, and thermal
shock. This provides a reliable high-temperature processing environment
for advanced industries such as semiconductor manufacturing and
metallurgy.
SiC Horizontal Furnace Tube Parameters
| Parameter Category | Parameter Name | Typical Value/Range | Significance |
| Material Characteristics | Coefficient of Thermal Expansion | ~4.5×10⁻⁶/°C | Extremely low thermal expansion ensures dimensional stability
at high temperatures and excellent thermal shock resistance.
|
| Thermal Conductivity | ~45 W/(m·K) (@1200°C) | High thermal conductivity facilitates rapid temperature
equalization and reduces thermal gradients.
|
| Flexural Strength | >250 MPa | High mechanical strength resists deformation and ensures
structural stability.
|
| Maximum Service Temperature | >1700°C (oxidizing atmosphere) | Resistance to extreme temperatures adapts to high-temperature
industrial environments.
|
| Mohs Hardness | 9.5 | High hardness endows the component with exceptional wear
resistance and long life.
|
| Functional Characteristics | Working Atmosphere | Oxygen, nitrogen, hydrogen chloride, etc. | Adapts to process atmospheres common in semiconductor and
photovoltaic industries.
|
| Chemical Stability | Resists acid/alkali and plasma erosion | Excellent chemical inertness suitable for harsh chemical
environments.
|
SiC Horizontal Furnace Tube Applications
Silicon Carbide Horizontal Furnace Tubes play a critical role in
multiple high-end manufacturing sectors due to their superior
performance:
- Semiconductor Manufacturing: Used in processes such as diffusion, oxidation, and chemical
vapor deposition (CVD) to carry and heat-treat silicon wafers,
ensuring process purity and uniformity.
- Photovoltaic Industry: Applied in production lines for high-efficiency solar cells
(e.g., TOPCon, HJT), supporting silicon wafers in LPCVD equipment
for passivation layer deposition, diffusion, and annealing.
- Metallurgy and High-Temperature Processing: Serves as a furnace tube in non-ferrous metal smelting (e.g.,
aluminum, copper) and steel manufacturing, withstanding corrosion
from molten metals and high-temperature loads.
- Industrial Kilns: Used in tunnel kilns and shuttle kilns as high-temperature
furnace tubes or kiln furniture, enhancing operational efficiency
and service life.
SiC Horizontal Furnace Tube Characteristics
3D printed integrated forming
Base material impurity content <300 ppm
CVD silicon carbide coating base material impurity content <5
ppm
High thermal conductivity
High thermal shock stability
Customized SiC Ceramic Components of ZMSH
ZMSH supports precision custom machining of various silicon
carbide (SiC) ceramic products. Whether for special dimensions,
complex structures, or specific performance requirements, we can
achieve them through processes such as reaction sintering,
pressureless sintering, and chemical vapor deposition (CVD). If
you have needs for silicon carbide ceramic component design,
material selection, or application scenario adaptation, please feel
free to inquire. We will provide technical solutions and rapid
response services.
SiC Horizontal Furnace Tube FAQ
Q1: What is the primary application of a silicon carbide horizontal
furnace tube?
A1: It is primarily used in high-temperature processes (up
to 1700°C) within semiconductor manufacturing and photovoltaic
industries, such as diffusion, oxidation, and chemical vapor
deposition (CVD), ensuring precise thermal treatment and coating
uniformity for wafers and solar cells.
Q2: Why choose silicon carbide over traditional materials for
horizontal furnace tubes?
A2: Silicon carbide offers exceptional thermal stability (low
CTE ~4.5×10⁻⁶/℃), high thermal conductivity (~45 W/m·K at 1200°C),
and superior chemical inertness, enabling longer service life,
reduced maintenance costs, and reliable performance in corrosive
atmospheres (e.g., oxygen, nitrogen, HCl) compared to quartz or
metal alternatives.
Tags: #SiC Horizontal Furnace Tube, #CVD Coating, #High-Purity,
#Customized, #SiC Ceramics, #Process Tube, #High Thermal
Conductivity
