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4H-N As-Cut Silicon Carbide Wafer 0.5mm Thickness For Power Electronics

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    Buy cheap 4H-N As-Cut Silicon Carbide Wafer 0.5mm Thickness For Power Electronics from wholesalers
     
    Buy cheap 4H-N As-Cut Silicon Carbide Wafer 0.5mm Thickness For Power Electronics from wholesalers
    • Buy cheap 4H-N As-Cut Silicon Carbide Wafer 0.5mm Thickness For Power Electronics from wholesalers
    • Buy cheap 4H-N As-Cut Silicon Carbide Wafer 0.5mm Thickness For Power Electronics from wholesalers
    • Buy cheap 4H-N As-Cut Silicon Carbide Wafer 0.5mm Thickness For Power Electronics from wholesalers

    4H-N As-Cut Silicon Carbide Wafer 0.5mm Thickness For Power Electronics

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    Brand Name : zmsh
    Model Number : 6inch
    Price : by case
    Delivery Time : 15days within
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    4H-N As-Cut Silicon Carbide Wafer 0.5mm Thickness For Power Electronics

    6inch sic substrates, sic ingot sic crystal ingots sic crystal block sic semiconductor substrates 2inch 3inch 4inch 6inch 4h no doped wafer


    we can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2 -6inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .


    1.material application and advantagement

    Applications:

    • GaN epitaxy device
    • Optoelectronic device
    • High frequency device
    • High power device
    • High temperature device
    • Light emitting diodes


    • Low lattice mismatch
    • High thermal conductivity
    • Low power consumption
    • Excellent transient characteristics
    • High band gap


    SILICON CARBIDE MATERIAL PROPERTIES
    Polytype
    Single Crystal 4H
    Single Crystal 6H
    Lattice Parameters
    a=3.076 Å
    a=3.073 Å
    c=10.053 Å
    c=15.117 Å
    Stacking Sequence
    ABCB
    ABCACB
    Band-gap
    3.26 eV
    3.03 eV
    Density
    3.21 · 103 kg/m3
    3.21 · 103 kg/m3
    Therm. Expansion Coefficient
    4-5×10-6/K
    4-5×10-6/K
    Refraction Index
    no = 2.719
    no = 2.707
    ne = 2.777
    ne = 2.755
    Dielectric Constant
    9.6
    9.66
    Thermal Conductivity
    490 W/mK
    490 W/mK
    Break-Down Electrical Field
    2 – 4 · 108 V/m
    2 – 4 · 108 V/m
    Saturation Drift Velocity
    2.0 · 105 m/s
    2.0 · 105 m/s
    Electron Mobility
    800 cm2/V·S
    400 cm2/V·S
    hole Mobility
    115 cm2/V·S
    90 cm2/V·S
    Mohs Hardness
    ~9
    2. Material Size describtion
    3.productes

    FAQ:


    Q: What's your MOQ and delivery time?

    A: (1) For inventory, the MOQ is 3pcs. if 5-10pcs it's better in 10-30days

    (2) For 6inch customized products, the MOQ is 10pcs up in 30-50days


    Q: What's the way of shipping and cost?

    A:(1) We accept DHL, Fedex, EMS etc.

    (2) it is fine If you have your own express account ,If not,we could help you ship them and Freight is in accordance with the actual settlement.


    Q: How to pay?

    A: T/T, 100%


    Q: Do you have standard products?

    A:there are not 6inch Our standard products in stock.

    but as like substrates 4inch 0.33mm 2sp thickness have some in stock


    Thanks~~~
    Quality 4H-N As-Cut Silicon Carbide Wafer 0.5mm Thickness For Power Electronics for sale
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