1. Gallium nitride (GaN) is a very hard made material that has a wurtzite crystal structure and probably is the most important semiconductor material as the third generation semi material.
2. It can be used to emit brilliant light in the form of light emitting diodes (LEDs) and laser diodes, as well as being the key material for next generation high frequency, high power transistors capable of operating at high temperatures.
3. GaN based epitaxial wafer (Sapphire,SiC) Epitaxial wafers are grown by MBE or MOCVD method , one layer or multi-layer structures on Sapphire substrates , diameter up to 4 inch.

2” GaN Templates

Item	GaN-T-N	GaN-T-S
Dimensions	Ф 2”
Thickness	15 μm, 20 μm, 30 μm, 40 μm	30 μm, 90 μm
Orientation	C-axis(0001) ± 1°
Conduction Type	N-type	Semi-Insulating
Resistivity(300K)	< 0.05 Ω·cm	>106 Ω·cm
Dislocation Density	Less than 1x108 cm-2
Substrate structure	Thick GaN on 430um or 330um Sapphire(0001)
Useable Surface Area	> 90%
Polishing	Standard: SSP Option: DSP
Package	Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.

-FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF by FOB.
Q: What's the delivery time?
(1) For the standard products such as 2inch 0.33mm wafer.
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.
Q: How to pay?
100％T/T In advance, Paypal, West Union, MoneyGram,