Home > Gallium Nitride Wafer >

2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material

Product Categories

SHANGHAI FAMOUS TRADE CO.,LTD

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material

Ask Lasest Price
Brand Name :	zmkj
Model Number :	GaN-non-polar
Price :	by case
Payment Terms :	L/C, T/T
Delivery Time :	2-4weeks

Add to Cart

Product Details
Company Profile

2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material

2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane)

GaN Wafer Characteristic

Product

Gallium nitride (GaN) substrates

Product Description:

Saphhire GaN template is presented Epitxial hydride vapor phase epitaxy (HVPE) method. In the HVPE process, the acid produced by the reaction GaCl, which is in turn reacted with ammonia to produce gallium nitride melt. Epitaxial GaN template is a cost-effective way to replace gallium nitride single crystal substrate.

Technical parameters:

Size	2 "round; 50mm ± 2mm
Product Positioning	C-axis <0001> ± 1.0.
Conductivity type	N-type ＆ P-type
Resistivity	R <0.5Ohm-cm
Surface treatment (Ga face)	AS Grown
RMS	<1nm
Available surface area	> 90%

Specifications:

GaN epitaxial film (C Plane), N-type, 2 "* 30 microns, sapphire;

GaN epitaxial film (C Plane), N-type, 2 "* 5 microns sapphire;

GaN epitaxial film (R Plane), N-type, 2 "* 5 microns sapphire;

GaN epitaxial film (M Plane), N-type, 2 "* 5 microns sapphire.

AL2O3 + GaN film (N-type doped Si); AL2O3 + GaN film (P-type doped Mg)

Note: according to customer demand special plug orientation and size.

Standard Packaging:

1000 clean room, 100 clean bag or single box packaging

Application

GaN can be used in many areas such as LED display, High-energy Detection and Imaging,
Laser Projection Display, Power Device, etc.

Laser Projection Display, Power Device, etc.
Date storage
Energy-efficient lighting
Full color fla display
Laser Projecttions
High- Efficiency Electronic devices
High- Frequency Microwave Devices
High-energy Detection and imagine
New energy solor hydrogen technology
Environment Detection and biological medicine
Light source terahertz band

Specifications:

GaN Template specification

2~4inch Free-standing GaN Specification file

Item	GaN-FS-C-U-C50	GaN-FS-C-N-C50	GaN-FS-C-SI-C50
Dimensions	e 50.8 mm ± 1 mm
Thickness	350 ± 25 pm
Useable Surface Area	> 90%
Orientation	C-plane (0001) off angle toward M-Axis 0.35° ± 0.15°
Orientation Flat	(1-100) ±0.5°, 16.0 ±1.0 mm
Secondary Orientation Flat	(11-20) ±3°, 8.0 ±1.0 mm
TTV(Total Thickness Variation)	< 15 pm
BOW	< 20 pm
Conduction Type	N-type	N-type	Semi-Insulating (Fe-doped)
Resistivity(3O0K)	< 0.1 Q・cm	< 0.05 Q・cm	>106 Q・cm
Dislocation Density	From 1x105 cm-2 to 3x106 cm-2
Polishing	Front Surface: Ra < 0.2 nm (polished); or < 0.3 nm (polished and surface treatment for epitaxy)
	Back Surface: 0.5~1.5 pm; option: 1~3 nm (fine ground); < 0.2 nm (polished)
Package	Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

size	4”GaN Substrates
Item	GaN-FS-N
Dimensions size	Ф 100.0mm ± 0.5mm
Thickness of Substrate	450 ± 50 µm
Orientation of Substrate	C-axis(0001) toward M-axis 0.55± 0.15°
Polish	SSP Or DSP
Method	HVPE
BOW	<25UM
TTV	<20um
Roughness	<0.5nm
resistivity	0.05ohm.cm
Dopant	Si
(002) FWHM&(102) FWHM	<100arc
Quantity and maximum size of holes and pits	Production grade ≤23@1000 um;Research grade ≤68@1000 um
Quantity and maximum size of holes and pits	Dummy grade ≤112@1000 um
Useable area	P level>90%; R level>80%: Dlevel>70%(edge and macro defects exclusion)

	Non-Polar Freestanding GaN Substrates(a-plane and m-plane)
Item	GaN-FS-a	GaN-FS-m
Dimensions	5.0mm×5.5mm
	5.0mm×10.0mm
	5.0mm×20.0mm
	Customized Size
Thickness	330 ± 25 µm
Orientation	a-plane ± 1°	m-plane ± 1°
TTV	≤15 µm
BOW	≤20 µm
Conduction Type	N-type
Resistivity(300K)	< 0.5 Ω·cm
Dislocation Density	Less than 5x106 cm-2
Useable Surface Area	> 90%
Polishing	Front Surface: Ra < 0.2nm. Epi-ready polished
	Back Surface: Fine ground
Package	Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

2.ZMKJ provides GaN wafer to microelectronics and optoelectronics industry in diameter 2" to 4".

GaN epitaxial wafers are grown by HVPE or MOCVD method , can be used as an ideal and excellent substrate for high frequency , high speed and high power device . Currently we can offer GaN epitaxial wafer for fundamental research and device product development use, including GaN template , AlGaN

and InGaN . Besides standard GaN based wafer,you are welcome to discuss your epi layer structure .

Product Tags:


*From:	Your email address is incorrect!
*To:	SHANGHAI FAMOUS TRADE CO.,LTD
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!

Explore more Gallium Nitride Wafer products from this supplier

Find Similar Products By Category:

General Industrial Equipment

Hot Searches:

SHANGHAI FAMOUS TRADE CO.,LTD

2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material

2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material

2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material

gan substrate

gan template

2-4inch HVPE GaN Wafer Customized Size Free - Standing GaN Single Crystal Material