Product Description:
Silicon carbide (SiC Substrate) was discovered in 1893 as an industrial abrasive for grinding
wheels and automotive brakes. About midway through the 20th
century, SiC Substrate uses grew to include in LED technology. Since then, it has
expanded into numerous semiconductor applications due to its
advantageous physical properties. These properties are apparent in
its wide range of uses in and outside the semiconductor industry.
With Moore’s Law appearing to reach it’s limit, many companies
within the semiconductor industry is looking towards silicon
carbide as the semiconductor material of the future.
SiC Substrate can be produced using multiple polytypes of SiC, although within
the semiconductor industry, most substrates are either 4H-SiC, with
6H- becoming less common as the SiC market has grown. When
referring to 4H- and 6H- silicon carbide, the H represents the
structure of the crystal lattice. The number represents the
stacking sequence of the atoms within the crystal structure. This
is described in the SVM capabilities chart below.
Features:
| Parameter | Value | Unit | Description | | Hardness | 9.5 | Mohs hardness | Extremely high hardness, suitable for wear-resistant applications | | Density | 3.21 | g/cm³ | High density, suitable for high-temperature and high-pressure
environments | | Electrical Resistivity | 10^3 to 10^11 | Ω·cm | Depends on doping level, suitable for high-voltage applications | | Thermal Conductivity | 490 | W/m·K | High thermal conductivity, suitable for power electronics needing
effective heat dissipation | | Thermal Expansion Coefficient | 4.0 × 10^-6 | /K | Low thermal expansion coefficient, ensures dimensional stability
under temperature variations | | Refractive Index | 2.55 to 2.75 | Dimensionless | Applicable in optical uses, especially in the visible to
near-infrared range |
|
Applications:
4H-N SiC (silicon carbide) is a semiconductor material that is
widely used in high-performance electronic devices due to its
excellent thermal conductivity, electrical properties and chemical
stability. Especially in high temperature, high pressure or high frequency
environments, the characteristics of 4H-N SiC make it an ideal
choice. This material is mainly used in the manufacture of high performance
power devices and electronic components such as Schottky diodes,
metal-oxide-semiconductor field-effect transistors (MOSFETs) and
insulated-gate bipolar transistors (IGBTs). In addition, 4H-N SiC is also used in the production of LED lights
and components for high-frequency communication systems, as it can
effectively reduce system energy consumption and improve overall
performance and reliability.
ZMSH SIC010 is versatile and can be used in a variety of
industries. Its excellent properties make it an ideal choice for
high-temperature, high-power, and harsh environments. The
customized plastic boxes make it easy to transport and store the
silicon carbide wafers.
Customization:
ZMSH SIC Substrate Product Customization Services:
- Customized shape SiC plates available
- Customized size SiC chips available
- Silicon carbide wafers also available
Product Attributes:
| Brand Name | ZMSH |
| Payment Terms | T/T |
| Minimum Order Quantity | 10pc |
| Surface Roughness | Ra<0.5nm |
| Compressive Strength | >1000MPa |
| Tensile Strength | >400MPa |
Packing and Shipping:
Product Packaging:
The SiC substrate product will be carefully wrapped in foam padding
to ensure its safety during shipping. The wrapped substrate will
then be placed in a sturdy cardboard box and sealed to prevent any
damage during transportation.
Shipping:
The SiC substrate product will be shipped via a reliable courier
service that provides tracking information, such as DHL or FedEx.
The shipping cost will depend on the destination and the weight of
the package. The estimated shipping time will also depend on the
location of the recipient.
