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4° Off-axis SiC Substrate 2 inch High Temperature Applications Epitaxial Wafer

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4° Off-axis SiC Substrate 2 inch High Temperature Applications Epitaxial Wafer

4° Off-axis SiC Substrate 2 inch High Temperature Applications Epitaxial Wafer

4° Off-axis SiC Substrate 2 inch High Temperature Applications Epitaxial Wafer Product Description: The SiC Substrate also has a surface roughness of Ra<0.5nm, which is essential for applications that ...

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